Impedance Spectroscopy of Au-CdTe:Ga Schottky Contacts

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.

متن کامل

Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts

The influence of premetallization surface preparation on the structural, chemical, and electrical properties of Au– nGaN interfaces has been investigated by x-ray photoemission spectroscopy ~XPS!, current-voltage measurement (I-V) and cross-section transmission electron microscopy ~TEM!. XPS analysis showed that the three GaN substrate treatments investigated i.e., ex situ hydrofluoric acid etc...

متن کامل

Minority carrier effects in nanoscale Schottky contacts.

We report the current-voltage behavior for nanoscale point contacts to Si(111) obtained in ultrahigh vacuum using scanning tunneling microscopy. Epitaxial CoSi(2) islands provide single-crystal contacts with well-defined size and shape. The zero bias conductance is found to be independent of the island size (10(2)-10(4) nm(2)) and shape, but varies strongly with the surface Fermi level position...

متن کامل

Tantalum silicide Schottky contacts to GaAs

Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...

متن کامل

Thermally Stimulated Deep-Level Impedance Spectroscopy: Application to an n-GaAs Schottky Diode

Impedance spectroscopy with temperature as a parameter is shown to be sensitive to deep-level states in an n-GaAs Schottky diode. A mathematical model is developed which accounts for the influence of electronic transitions involving deep-level states on the impedance response of the device. Regression of the model to the data is shown to require a weighting strategy that accounts for the varian...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2008

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.114.1279